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| Influence of deposition conditions on nanostructured InSe thin films | 01.01.2019 | | | |
| The Influence Of High-Energy Electrons Irradiatıon On Surface of N-GaP and on Au/n-GaP/Al Schottky Barrier Diode | 01.01.2018 | | | |
| Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation | 01.01.2017 | | | |
| Growth of InSe:Mn semiconductor crystals by Bridgman–Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes | 01.01.2016 | | | |
| Characterization of DMS Zn1-xAxO (A: Fe, Ni, Co and Mn, x: 0.01, 0.02,…, 0.1) grown by ECD method | 01.01.2016 | | | |
| Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation | 01.01.2014 | | | |
| Electrochemical growth of GaTe onto the p-type Si substrate and the characterization of the Sn/GaTe Schottky diode as a function of temperature | 01.01.2014 | | | |
| Temperature dependent current-voltage characteristics of electrodeposited p-ZnO/n-Si heterojunction | 01.01.2013 | | | |
| Structural, optical and electrical properties of n-ZnO/p-GaAs hetero-junction | 01.01.2010 | | | |
| The effect of the electron irradiation on the series resistance of Au/Ni/6H SiC and Au/Ni/4H-SiC Schottky contacts | 01.01.2010 | | | |
| Nanoporous structures on ZnO thin films | 01.01.2010 | | | |
| Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes | 01.01.2009 | | | |
| Oxygen effects on radiation hardness of ZnO thin films | 01.01.2009 | | | |
| Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics | 01.01.2009 | | | |
| Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC | 01.01.2009 | | | |
| Electrical characterization of Au/n-ZnO Schottky contacts on n-Si | 01.01.2009 | | | |
| Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing | 01.01.2008 | | | |
| High energy electron irradiation effects on Au/n-ZnO Schottky diodes | 01.01.2008 | | | |
| High-temperature Schottky diode characteristics of bulk ZnO | 01.01.2007 | | | |
| Effect of high-energy electron irradiation on ZnO based ohmic and Schottky contacts | 01.01.2006 | | | |
| situ Hall investigation of electron irradiated and annealed AlGaN/GaN HFETs | 01.01.2006 | | | |
| Current-Voltage-Temperature Analysis of Inhomogeneous Au/n-GaAs Schottky Contacts | 01.01.2005 | | | |
| Radiation hardness of ZnO at low temperatures | 01.01.2004 | | | |
| Temperature dependence of reverse bias C-V characteristics of Sn/p-GaTe Schottky diodes | 01.01.2004 | | | |
| An experimental set-up for in-situ Hall measurements under high-energy electron irradiation for wide-bandgap materials | 01.01.2004 | | | |
| Electrical and optical properties of defects and impurities in ZnO | 01.01.2003 | | | |
| A simple method producing shadow masks used in electrical characterization techniques | 01.01.2003 | | | |
| Temperature dependence of current-voltage characteristics of Sn/p-GaTe Schottky diodes | 01.01.2003 | | | |
| Formation of low and stable ohmic contacts to GaTe layered crystal | 01.01.2003 | | | |
| Temperature dependence of magnetoresistance and Hall effect for Ho doped n-type InSe | 01.01.2000 | | | |